Effect of sintering temperatures on sr-doped NiO ceramics

Sr - doped NiO ceramic was prepared using solid state method. The calcination temperature used at 950 oC for 4 hours and the sintering temperatures was varied from 1100 to 1300 oC for 3 hours. The results depict the microstructures increasing in grains size (1-8 μm) by increase of sintering temperatures. The density and porosity testing support the result of microstructures analysis. The larger grains size induced the increase in density and lower in porosity. The dielectric properties is observed in a wide frequency range of (1 - 1 000 MHz). The increase of dielectric constant is associated with the decrease of dielectric loss. The optimum sintering temperature was obtained at 1200 oC depict the grain size range (1 - 2 μm) with highest dielectric constant (1.61 x 103) and lowest dielectric loss (1.15) at 1MHz.