Synthesis and characterization of Zinc Oxide added with Titanium Oxide Nanocomposite

Zin oxide (ZnO) is a promising semiconductor material with several key properties that make it suitable for various applications in electronics. High electron mobility, wide bandgap (3.37 eV), high breakdown voltage, transparency in the visible spectrum, and chemical stability make ZnO ideal for high-performance power electronics, UV light detection and emission, optoelectronics, and use in harsh environments. These properties make ZnO a highly sought-after material in the field of semiconductor devices. This work aimed to synthesize ZnO with TiOz at various weight percentages using a hydrothermal method. Samples were prepared by hydrothermal method with different amounts of TiO (10,20,30,40 and 50) % wt, and were added with ZnO at different amounts. To investigate the effects of TiO on the phase formation of ZnO determined using X-ray diffraction (XRD), UV-vis and Inductance (L), Capacitance (C) and Resistance (R) LCR meter. XRD was utilized to describe the samples after 40% wt of TiOz and ZnO were added to show the smaller band gap. According to the XRD result, TiO was successfully added to ZnO and formed a hexagonal wurtzite structure. The average crystallite sizes were 26.27, 22.74, 24.47, 16.08, and 16.63 nm for all samples, respectively. The band gaps calculated through UV-vis spectrum results are 3.86, 3.30, 2.89, 2.66, and 2.92 eV. The physical and optical properties decrease the crystallite size and band gap for TiO2 added with ZnO.